? semiconductor components industries, llc, 2005 august, 2005 ? rev. 1 1 publication order number: NTP75N06L/d NTP75N06L, ntb75n06l power mosfet 75 amps, 60 volts, logic level n?channel to?220 and d 2 pak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? pb?free packages are available typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 60 vdc drain?to?gate voltage (r gs = 10 m ) v dgr 60 vdc gate?to?source voltage ? continuous ? non?repetitive (t p 10 ms) v gs v gs 20 15 vdc drain current ? continuous @ t a = 25 c ? continuous @ t a = 100 c ? single pulse (t p 10 s) i d i d i dm 75 50 225 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1) p d 214 1.4 2.4 w w/ c w operating and storage temperature range t j , t stg ?55 to +175 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 50 vdc, v gs = 5.0 vdc, l = 0.3 mh i l(pk) = 75 a, v ds = 60 vdc) e as 844 mj thermal resistance ? junction?to?case ? junction?to?ambient (note 1) r jc r ja 0.7 62.5 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. when surface mounted to an fr4 board using minimum recommended pad size, (cu area 0.412 in 2 ). 75 amperes, 60 volts r ds(on) = 11 m n?channel d s g to?220ab case 221a style 5 1 2 3 4 marking diagrams & pin assignments a = assembly location y = year ww = work week g = pb?free package NTP75N06L ayww 1 gate 3 source 4 drain 2 drain 75n06lg ayww 1 gate 3 sourc e 4 drain 2 drain see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 1 2 3 4 d 2 pak case 418b style 2 http://onsemi.com
NTP75N06L, ntb75n06l http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (note 2) (v gs = 0 vdc, i d = 250 adc) temperature coefficient (positive) v (br)dss 60 ? 72 74 ? ? vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss ? ? ? ? 10 100 adc gate?body leakage current (v gs = 15 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 2) gate threshold voltage (note 2) (v ds = v gs , i d = 250 adc) threshold temperature coefficient (negative) v gs(th) 1.0 ? 1.58 6.0 2.0 ? vdc mv/ c static drain?to?source on?resistance (note 2) (v gs = 5.0 vdc, i d = 37.5 adc) r ds(on) ? 9.0 11 m static drain?to?source on?voltage (note 2) (v gs = 5.0 vdc, i d = 75 adc) (v gs = 5.0 vdc, i d = 37.5 adc, t j = 150 c) v ds(on) ? ? 0.75 0.61 0.99 ? vdc forward transconductance (note 2) (v ds = 15 vdc, i d = 37.5 adc) g fs ? 55 ? mhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz) c iss ? 3122 4370 pf output capacitance c oss ? 1029 1440 transfer capacitance c rss ? 276 390 switching characteristics (note 3) turn?on delay time (v dd = 30 vdc, i d = 75 adc, v gs = 5.0 vdc, r g = 9.1 ) (note 2) t d(on) ? 22 32 ns rise time t r ? 265 370 turn?off delay time t d(off) ? 113 160 fall time t f ? 170 240 gate charge (v ds = 48 vdc, i d = 75 adc, v gs = 5.0 vdc) (note 2) q t ? 66 92 nc q 1 ? 9.0 ? q 2 ? 47 ? source?drain diode characteristics forward on?voltage (i s = 75 adc, v gs = 0 vdc) (note 2) (i s = 75 adc, v gs = 0 vdc, t j = 150 c) v sd ? ? 1.0 0.9 1.15 ? vdc reverse recovery time (i s = 75 adc, v gs = 0 vdc, di s /dt = 100 a/ s) (note 2) t rr ? 70 ? ns t a ? 43 ? t b ? 27 ? reverse recovery stored charge q rr ? 0.16 ? c 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTP75N06L, ntb75n06l http://onsemi.com 3 0 120 3 60 2 1 i d , drain current (amps) 0 v gs , gate?to?source voltage (v) i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) 160 v ds , drain?to?source voltage (v) 20 40 80 100 140 4 r ds(on) , drain?to?source resistance ( ) 2 1.8 1.4 1.6 1.2 1 0.6 100 10 1000 10000 100000 0.008 figure 1. on?region characteristics figure 2. transfer characteristics 080 60 40 20 100 120 figure 3. on?resistance vs. gate?to?source voltage i d , drain current (amps) figure 4. on?resistance vs. drain current and gate voltage i d , drain current (amps) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (v) i dss , leakage (na) ?50 50 25 0 ?25 75 100 1.4 1.8 5 0.012 0.004 0.016 0.02 04050 30 20 10 60 120 60 0 160 20 40 80 100 140 2.2 2.6 3 3.4 3.8 4.2 4.6 r ds(on) , drain?to?source resistance (normalized) 0.8 175 150 125 0.008 0.012 0.004 0.016 0.02 080 60 40 20 100 12 0 v gs = 5 v t j = 25 c t j = 100 c t j = ?55 c i d = 37.5 a v gs = 5 v v ds 10 v t j = 25 c t j = ?55 c t j = 100 c t j = 100 c t j = 125 c t j = 150 c v gs = 0 v t j = 25 c t j = 100 c t j = ?55 c v gs = 10 v v gs = 6 v v gs = 5 v v gs = 4.5 v v gs = 4 v v gs = 3.5 v v gs = 3 v v gs = 8 v v gs = 7 v v gs = 10 v
NTP75N06L, ntb75n06l http://onsemi.com 4 1000 100 10 1 0 200 400 600 800 1000 4 2 5 1 3 0 6 50 10 10 6000 5 0 c, capacitance (pf) 0 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v gs , gate?to?source voltage (v) 1 1000 10 100 10 100 figure 9. resistive switching time variations vs. gate resistance r g , gate resistance ( ) figure 10. diode forward voltage vs. current v sd , source?to?drain voltage (v) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (v) figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse drain?to?source avalanche energy (mj) 12000 0.1 10 1 100 010 70 0.6 0.76 0.8 0.72 0.68 0.84 0.64 0.9 6 30 60 20 40 0 70 80 25 125 150 100 75 50 17 5 gate?to?source or drain?to?source (v) 2000 4000 8000 10000 25 i s , source current (amps) 15 20 5 20 30 40 50 60 0.86 0.92 r ds(on) limit thermal limit package limit v gs i d = 75 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 15 v single pulse t c = 25 c v ds = 30 v i d = 75 a v gs = 5 v v gs = 0 v t j = 25 c i d = 75 a 10 ms 1 ms 100 s 10 s dc t r t d(off) t d(on) t f v ds q 2 q 1 q t 10
NTP75N06L, ntb75n06l http://onsemi.com 5 r(t), effective transient thermal resistance (normalized) t, time ( s) figure 13. thermal response 0.1 1.0 0.01 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r jc (t) = r(t) r jc d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 1.0 10 0.1 0.01 0.001 0.0001 0.00001 ordering information device package shipping ? NTP75N06L to?220ab 50 units / rail ntb75n06l d 2 pak 50 units / rail ntb75n06lg d 2 pak (pb?free) 50 units / rail ntb75n06lt4 d 2 pak 800 units / tape & reel ntb75n06lt4g d 2 pak (pb?free) 800 units / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTP75N06L, ntb75n06l http://onsemi.com 6 package dimensions d 2 pak case 418b?04 issue j style 2: pin 1. gate 2. drain 3. source 4. drain seating plane s g d ?t? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ?b? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b?01 thru 418b?03 obsolete, new standard 418b?04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w?w view w?w view w?w 123 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1
NTP75N06L, ntb75n06l http://onsemi.com 7 package dimensions to?220 case 221a?09 issue aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 5: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTP75N06L/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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